Engineering Defect-Phonon Interactions Through Heterophase-Interfaces in Silicon Carbide Membranes
In briefControlling Defect-Phonon Interactions in Silicon Carbide Membranes via Heterophase Interfaces
SummaryThis paper uses remote epitaxy to create controlled heterophase interfaces (3C/4H) in silicon carbide membranes and studies how they affect defect-phonon interactions. Compared with single-phase 4H-SiC membranes, silicon vacancy (Vsi) defects at the 3C/4H interface show markedly enhanced zero-phonon optical transitions, with a zero-phonon linewidth of 4.71 meV even at room temperature. The authors conclude that heterophase-interface engineering is an effective way to tailor defect-phonon interactions and realize bright room-temperature quantum emitters.